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TOSHIBA TK6A80E,S4X product image
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TOSHIBA TK6A80E,S4XRoHS

Manufacturer
TOSHIBA
MPN
TK6A80E,S4X
LCSC Part #
C556305
Packaging
TO-220-3
Customer #
Key Attributes
MOSFET N-CH 800V 6A TO-220-3
Datasheetpdf iconTOSHIBA TK6A80E,S4X
In-Stock: 4,252
4,252 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.4535$ 0.45
10+$ 0.3989$ 3.99
30+$ 0.3725$ 11.18
100+$ 0.3444$ 34.44
500+$ 0.3288$ 164.40
1,000+$ 0.3195$ 319.50
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingTO-220-3
Drain to Source Voltage800V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
Gate Charge(Qg)32nC@10V
TypeN-Channel
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Features

AI Translation
  • Low drain-source on-resistance: RDS(ON)=1.35 Ω (typ.)
  • Low leakage current: IDSS=10 μA (max) (VDS=640 V)
  • Enhancement mode: Vth=2.5 to 4.0 V (ΔVDS=10 V, ID=0.6 mA)

Applications

AI Translation
  • Switching Voltage Regulators