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RENESAS AT25SF641B-MHB-T product image
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RENESAS AT25SF641B-MHB-TRoHS

Manufacturer
RENESAS
MPN
AT25SF641B-MHB-T
LCSC Part #
C5555635
Packaging
UDFN-8(5x6)
Customer #
Key Attributes
64-Mbit SPI Serial Flash Memory with Dual I/O and Quad I/O Support
Datasheetpdf iconRENESAS AT25SF641B-MHB-T
In-Stock: 53
53 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.6146$ 1.61
10+$ 1.3418$ 13.42
30+$ 1.1918$ 35.75
100+$ 1.0211$ 102.11
500+$ 0.9461$ 473.05
1,000+$ 0.9126$ 912.60
Standard Packaging6000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerRENESAS
PackagingUDFN-8(5x6)
Voltage - Supply2.7V~3.6V
Memory Size64Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)65ms@(4KB)
Standby Supply Current14uA
InterfaceSPI
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging6000
Sales UnitPiece

Features

AI Translation
  • Single 2.7 V - 3.6 V Single Supply Voltage
  • 64-Mbit Flash Memory
  • Serial Peripheral Interface (SPl) Compatible
  • Supports SPl modes 0 and 3
  • Supports single input/output operations (1,1,1)
  • Supports dual input and dual output operations (1-1-2), (1-2-2), (0-2-2)
  • Supports quad input and quad output operations (1-1-4), (1-4-4), (0-4-4)
  • 133 MHz Maximum Operating Frequency
  • Erase Size and Duration
    • Uniform 4-kbyte Block Erase (65 ms typical)
    • Uniform 32-kbyte Block Erase (150 ms typical)
    • Uniform 64-kbyte Block Erase (240 ms typical)
    • Full Chip Erase (30 seconds typical)
  • Continuous Read mode (with 8/16/32/64 bytes wrap) - optimized for XiP
  • Serial Flash Discoverable Parameters (SFDP, JESD216B) support
  • OTP Memory
    • Three Protected Programmable Security Register Pages (Page size: 256 bytes)
    • 64-bit factory programmable UID register
  • Hardware Write Protection (WP pin)
  • Software Write protection (Programmable non-volatile control registers)
  • Program and Erase Suspend and Resume
  • Byte programming size: up to 256 bytes
  • Low Power Dissipation
    • Standby Current (14 μA typical)
    • Deep Power-Down Current (1 μA typical)
  • Endurance: 100,000 Program and Erase Cycles
  • Data Retention: 20 Years
  • Industrial Temperature Range (-40 °C to 85 °C)
  • Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
    • 8-pad W-SOIC (0.208")
    • 8-pad Ultra-Thin DFN (5×6×0.6 mm)
    • Die Wafer Form