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Infineon IRF7205TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7205TRPBF
LCSC Part #
C55419
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH 30V 4.6A SO-8
Datasheetpdf iconInfineon IRF7205TRPBF
In-Stock: 1,275
1,275 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5514$ 0.55
10+$ 0.4346$ 4.35
30+$ 0.3843$ 11.53
100+$ 0.3211$ 32.11
500+$ 0.2644$ 132.20
1,000+$ 0.2481$ 248.10
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)130mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)870pF
Gate Charge(Qg)40nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

Fourth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO - 8 has been modified through a customized leadframe for enhanced thermal characteristics and dual - die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Features

AI Translation
  • Advanced process technology
  • Ultra-low on-resistance
  • Surface mount
  • Dynamic dv/dt rating
  • Fast switching
  • Lead-free