TI CSD17302Q5A
| Manufacturer | |
| MPN | CSD17302Q5A |
| LCSC Part # | C553151 |
| Packaging | DFN-8(4.9x5.7) |
| Customer # | |
| Key Attributes | 30V 87A 1.7V 3W 6.4mΩ@8V 1 N-channel DFN-8(4.9x5.7) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | DFN-8(4.9x5.7) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 87A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 6.4mΩ@8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 5.4nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET™ power MOSFETs are designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Features
AI Translation
- Optimized for 5V gate drive
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- SON 5mm×6mm plastic package
Applications
AI Translation
- Notebook point-of-load — synchronous step-down point-of-load for networking, telecom, and computing systems
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.2604 | $ 1.26 |
| 10+ | $ 1.2336 | $ 12.34 |
| 30+ | $ 1.2146 | $ 36.44 |
| 100+ | $ 1.1972 | $ 119.72 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | DFN-8(4.9x5.7) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 87A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 6.4mΩ@8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 5.4nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET™ power MOSFETs are designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Features
AI Translation
- Optimized for 5V gate drive
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- SON 5mm×6mm plastic package
Applications
AI Translation
- Notebook point-of-load — synchronous step-down point-of-load for networking, telecom, and computing systems
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



