Nexperia PHPT61002PYCLHX
| Manufacturer | |
| MPN | PHPT61002PYCLHX |
| LCSC Part # | C552664 |
| Packaging | SOT-669 |
| Customer # | |
| Key Attributes | TRANS PNP 100V 2A SOT-669 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 80 | |
| Pd - Power Dissipation | 3W | |
| Number | 1 PNP | |
| type | PNP | |
| Current - Collector(Ic) | 2A | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 300mV |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH.
Features
AI Translation
- High thermal power dissipation capability
- Suitable for high temperature applications up to 175 °C
- Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
- High energy efficiency due to less heat generation
Applications
AI Translation
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.3458 | $ 1.73 |
| 50+ | $ 0.2751 | $ 13.76 |
| 150+ | $ 0.2449 | $ 36.74 |
| 1,500+ | $ 0.2071 | $ 310.65 |
| 3,000+ | $ 0.1903 | $ 570.90 |
| 4,500+ | $ 0.1802 | $ 810.90 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 80 | |
| Pd - Power Dissipation | 3W | |
| Number | 1 PNP | |
| type | PNP | |
| Current - Collector(Ic) | 2A | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 300mV |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH.
Features
AI Translation
- High thermal power dissipation capability
- Suitable for high temperature applications up to 175 °C
- Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
- High energy efficiency due to less heat generation
Applications
AI Translation
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



