Nexperia PHPT61002PYCX
| Manufacturer | |
| MPN | PHPT61002PYCX |
| LCSC Part # | C552663 |
| Packaging | SOT-669 |
| Customer # | |
| Key Attributes | TRANS PNP 100V 2A SOT-669 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 3W | |
| Number | 1 PNP | |
| type | PNP | |
| Current - Collector(Ic) | 2A | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 250mV |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.
Features
AI Translation
- High thermal power dissipation capability
- Suitable for high temperature applications up to 175 °C
- Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
- High energy efficiency due to less heat generation
Applications
AI Translation
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
In-Stock: 16
16 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7409 | $ 0.74 |
| 10+ | $ 0.6032 | $ 6.03 |
| 30+ | $ 0.5351 | $ 16.05 |
| 100+ | $ 0.4671 | $ 46.71 |
| 500+ | $ 0.4259 | $ 212.95 |
| 1,500+ | $ 0.4053 | $ 607.95 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 3W | |
| Number | 1 PNP | |
| type | PNP | |
| Current - Collector(Ic) | 2A | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 250mV |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.
Features
AI Translation
- High thermal power dissipation capability
- Suitable for high temperature applications up to 175 °C
- Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
- High energy efficiency due to less heat generation
Applications
AI Translation
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



