Nexperia PDTC123TU,115

Manufacturer	Nexperia
MPN	PDTC123TU,115
LCSC Part #	C552186
Packaging	SOT-323-3
Customer #
Key Attributes	50V 30 100mA 200mW NPN 1 NPN (Pre-Biased) SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS
Datasheet	Nexperia PDTC123TU,115

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Manufacturer	Nexperia
Packaging	SOT-323-3
Current - Collector Cutoff	100nA
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	50V
Emitter-Base Voltage VEBO	5V
DC Current Gain	30
Vce Saturation(VCE(sat))	150mV@10mA,0.5mA
Operating Temperature	-65℃~+150℃
Current - Collector(Ic)	100mA
Output Voltage(VO(on))	-
Input Resistor	2.2kΩ
Resistor Ratio	-
Pd - Power Dissipation	200mW
Voltage - Input(Max)(VI(off))	-
Input Voltage (VI(on)@Ic,Vce)	-
type	NPN
Number	1 NPN (Pre-Biased)

In-Stock: 230

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Qty	Unit Price	Total Amount
5+	$ 0.0899	$ 0.45
50+	$ 0.0878	$ 4.39
150+	$ 0.0865	$ 12.98
500+	$ 0.0851	$ 42.55
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Manufacturer	Nexperia
Packaging	SOT-323-3
Current - Collector Cutoff	100nA
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	50V
Emitter-Base Voltage VEBO	5V
DC Current Gain	30
Vce Saturation(VCE(sat))	150mV@10mA,0.5mA
Operating Temperature	-65℃~+150℃
Current - Collector(Ic)	100mA
Output Voltage(VO(on))	-
Input Resistor	2.2kΩ
Resistor Ratio	-
Pd - Power Dissipation	200mW
Voltage - Input(Max)(VI(off))	-
Input Voltage (VI(on)@Ic,Vce)	-
type	NPN
Number	1 NPN (Pre-Biased)