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Nexperia PBSS5260QAZ product image
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Nexperia PBSS5260QAZRoHS

Manufacturer
MPN
PBSS5260QAZ
LCSC Part #
C551977
Packaging
DFN1010D-3
Customer #
Key Attributes
TRANS PNP 60V 1.7A DFN1010D-3
Datasheetpdf iconNexperia PBSS5260QAZ

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNexperia
PackagingDFN1010D-3
Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain160
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1.7A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))195mV

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA.

Features

AI Translation
  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Solderable side pads
  • AEC-Q101 qualified

Applications

AI Translation
  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.3346$ 1.67
50+$ 0.288$ 14.40
150+$ 0.268$ 40.20
500+$ 0.2431$ 121.55
2,500+$ 0.232$ 580.00
5,000+$ 0.2253$ 1126.50
Standard Packaging5000/Full Reel
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