Nexperia NX7002BKXBZ
| Manufacturer | |
| MPN | NX7002BKXBZ |
| LCSC Part # | C551613 |
| Packaging | DFN-6(1x1) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V DFN-6(1x1) |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6(1x1) | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 260mA | |
| RDS(on) | 2.2Ω@10V | |
| Pd - Power Dissipation | 407mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4.6pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6(1x1) | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 260mA | |
| RDS(on) | 2.2Ω@10V | |
| Pd - Power Dissipation | 407mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4.6pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Leadless ultra small and ultra thin SMD plastic package 1.1×1.0×0.37 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection >2 kV HBM
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
In-Stock: 5
5 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1786 | $ 0.89 |
| 50+ | $ 0.1416 | $ 7.08 |
| 150+ | $ 0.1257 | $ 18.86 |
| 500+ | $ 0.1059 | $ 52.95 |
| 2,500+ | $ 0.0971 | $ 242.75 |
| 5,000+ | $ 0.0918 | $ 459.00 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6(1x1) | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 260mA | |
| RDS(on) | 2.2Ω@10V | |
| Pd - Power Dissipation | 407mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4.6pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6(1x1) | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 260mA | |
| RDS(on) | 2.2Ω@10V | |
| Pd - Power Dissipation | 407mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 4.6pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Leadless ultra small and ultra thin SMD plastic package 1.1×1.0×0.37 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection >2 kV HBM
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
C551613 EasyEDA Library
Not drawn yet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



