Nexperia NX7002AKVL
| Manufacturer | |
| MPN | NX7002AKVL |
| LCSC Part # | C551606 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 300mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 265mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 430pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Very fast switching Trench MOSFET technology
- ESD protected
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
In-Stock: 9,120
9,120 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0683 | $ 0.68 |
| 100+ | $ 0.0536 | $ 5.36 |
| 300+ | $ 0.0462 | $ 13.86 |
| 1,000+ | $ 0.0407 | $ 40.70 |
| 5,000+ | $ 0.0363 | $ 181.50 |
| 10,000+ | $ 0.0341 | $ 341.00 |
Standard Packaging10000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 265mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 430pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Very fast switching Trench MOSFET technology
- ESD protected
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
C551606 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



