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Nexperia NX1029XHRoHS

Manufacturer
Nexperia
MPN
NX1029XH
LCSC Part #
C551584
Packaging
SOT-666
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 170mA SOT-666
Datasheetpdf iconNexperia NX1029XH
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.2457$ 1.23
50+$ 0.242$ 12.10
150+$ 0.2395$ 35.93
500+$ 0.237$ 118.50
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerNexperia
PackagingSOT-666
Current - Continuous Drain(Id)170mA
RDS(on)7.5Ω@10V
Pd - Power Dissipation330mW
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage60V;50V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)24pF
Gate Charge(Qg)350pC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)7pF;4.5pF
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Introduction

AI Translation

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

AI Translation
  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)

Applications

AI Translation
  • Level shifter
  • Power supply converter
  • Loadswitch
  • Switching circuits