TOSHIBA TLP291(GB-TP,SE

TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler. Since TLP291 is guaranteed wide operating temperature Ta = - 55 to 110°C and high isolation voltage (3750Vrms), it's suitable for high- density surface mounting applications such as small switching power supplies and programmable controllers.

• Collector-Emitter Voltage: 80 V (min)
• Current Transfer Ratio: 50% (min) Rank GB: 100% (min)
• Isolation Voltage: 3750 Vrms (min)
• Operation temperature: -55 to 110°C
• UL recognized: UL1577, File No. E67349
• cUL approved: CSA Component Acceptance Service No.5A, File No. 67349
• SEMKO approved: EN 60065: 2002, Approved no. 1200315 EN 60950-1: 2001, EN 60335-1: 2002, Approved no. 1200315
• BSI approved: BSI EN 60065: 2002, Approved no. 9036 : BSI EN 60950-1: 2006, Approved no. 9037
• Option (V4) VDE approved: EN 60747-5-5 Certificate, No. 40009347 Maximum operating insulation voltage: 707 Vpk Highest permissible over-voltage: 6000 Vpk

• small switching power supplies
• programmable controllers