Nexperia 2N7002BKV,115
| Manufacturer | |
| MPN | 2N7002BKV,115 |
| LCSC Part # | C551414 |
| Packaging | SOT-666 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 340mA SOT-666 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666 | |
| Current - Continuous Drain(Id) | 340mA | |
| RDS(on) | 1Ω@10V | |
| Pd - Power Dissipation | 350mW | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 60V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 600pC@4.5V | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswich
- Switching circuits
In-Stock: 2,980
2,980 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3189 | $ 1.59 |
| 50+ | $ 0.2494 | $ 12.47 |
| 150+ | $ 0.2196 | $ 32.94 |
| 500+ | $ 0.1824 | $ 91.20 |
| 2,500+ | $ 0.1659 | $ 414.75 |
| 4,000+ | $ 0.1559 | $ 623.60 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666 | |
| Current - Continuous Drain(Id) | 340mA | |
| RDS(on) | 1Ω@10V | |
| Pd - Power Dissipation | 350mW | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 60V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 600pC@4.5V | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswich
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



