Nexperia BSS84AKVL
| Manufacturer | |
| MPN | BSS84AKVL |
| LCSC Part # | C549760 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 50V 180mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 180mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 4.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 36pF | |
| Gate Charge(Qg) | 350pC@5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible ESD protection up to 1 kV
- Very fast switching
- AEC-Q101 qualified Trench MOSFET technology
Applications
AI Translation
- Relay driver
- High-side loadswitch
- High-speed line driver
- Switching circuits
In-Stock: 6,260
6,260 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0495 | $ 0.50 |
| 100+ | $ 0.0392 | $ 3.92 |
| 300+ | $ 0.034 | $ 10.20 |
| 1,000+ | $ 0.0301 | $ 30.10 |
| 5,000+ | $ 0.027 | $ 135.00 |
| 10,000+ | $ 0.0255 | $ 255.00 |
Standard Packaging10000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 180mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 4.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 36pF | |
| Gate Charge(Qg) | 350pC@5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible ESD protection up to 1 kV
- Very fast switching
- AEC-Q101 qualified Trench MOSFET technology
Applications
AI Translation
- Relay driver
- High-side loadswitch
- High-speed line driver
- Switching circuits
C549760 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



