Nexperia BSS138BKSH
| Manufacturer | |
| MPN | BSS138BKSH |
| LCSC Part # | C549758 |
| Packaging | TSSOP-6-1.3mm |
| Customer # | |
| Key Attributes | 320mA 1.6Ω@10V 280mW 1.6V 2 N-Channel TSSOP-6-1.3mm FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | TSSOP-6-1.3mm | |
| Current - Continuous Drain(Id) | 320mA | |
| RDS(on) | 1.6Ω@10V | |
| Pd - Power Dissipation | 280mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Drain to Source Voltage | 60V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 56pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic level compatible
- ESD protection up to 1.5 kV
- Ultra-fast switching
- AEC-Q101 qualified
- Trench MOSFET technology
Applications
AI Translation
- Relay driver
- Low-side load switch
- High-speed line driver
- Switching circuit
In-Stock: 100
100 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.224 | $ 0.22 |
| 10+ | $ 0.2191 | $ 2.19 |
| 30+ | $ 0.2142 | $ 6.43 |
| 100+ | $ 0.211 | $ 21.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | TSSOP-6-1.3mm | |
| Current - Continuous Drain(Id) | 320mA | |
| RDS(on) | 1.6Ω@10V | |
| Pd - Power Dissipation | 280mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Drain to Source Voltage | 60V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 56pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic level compatible
- ESD protection up to 1.5 kV
- Ultra-fast switching
- AEC-Q101 qualified
- Trench MOSFET technology
Applications
AI Translation
- Relay driver
- Low-side load switch
- High-speed line driver
- Switching circuit
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

