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Infineon/CYPRESS FM28V020-SGTR product image
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Infineon/CYPRESS FM28V020-SGTRRoHS

Manufacturer
Infineon/CYPRESS
MPN
FM28V020-SGTR
LCSC Part #
C54935
Packaging
SOIC-28-300mil
Customer #
Key Attributes
256-Kbit F-RAM Memory
Datasheetpdf iconInfineon/CYPRESS FM28V020-SGTR
In-Stock: 1,185
1,185 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 9.891$ 9.89
10+$ 8.7014$ 87.01
30+$ 7.2119$ 216.36
100+$ 6.6042$ 660.42
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerInfineon/CYPRESS
PackagingSOIC-28-300mil
Sleep mode current (Izz)-
Voltage - Supply2V~3.6V
Memory Size256Kbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000,000,000,000 Cycles
Clock Frequency15MHz
Features-
Data Retention - TDR (Year)151 years
Current - Supply5mA
Standby Supply Current90uA
InterfaceParallel Port (Parallel)
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

The FM28V020 is a 32Kx8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.

The FM28V020 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by CE(overline) or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28v020 ideal for nonvolatile memory applications requiring frequent or rapid writes.

The device is available in a 28-pin SOIC, 28-pin TSOP I and 32-pin TSOP I surface mount packages. Device specifications are guaranteed over the industrial temperature range -40℃ to +85℃

Features

AI Translation
  • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
  • High-endurance 100 trillion (10¹⁴) read/writes
  • 151-year data retention
  • NoDelay™ writes
  • Page mode operation
  • Advanced high-reliability ferroelectric process
  • SRAM compatible
  • Industry-standard 32K × 8 SRAM pinout
  • 70-ns access time, 140-ns cycle time
  • Superior to battery-backed SRAM modules
  • No battery concerns
  • Monolithic reliability
  • True surface mount solution, no rework steps
  • Superior for moisture, shock, and vibration
  • Resistant to negative voltage undershoots
  • Low power consumption
  • Active current 5mA (typ)
  • Standby current 90μA (typ)
  • Low-voltage operation: VDD = 2.0V to 3.6V
  • Industrial temperature: -40°C to +85°C
  • 28-pin small outline integrated circuit (SOIC) package
  • 28-pin thin small outline package (TSOP) Type I
  • 32-pin thin small outline package (TSOP) Type I
  • Restriction of hazardous substances (RoHS) compliant