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TOSHIBA 1SS384TE85LF product image
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TOSHIBA 1SS384TE85LFRoHS

Manufacturer
TOSHIBA
MPN
1SS384TE85LF
LCSC Part #
C5483287
Packaging
SC-82
Customer #
Key Attributes
2 Independent 10V 100mA 500mV@100mA SC-82 Diode Arrays RoHS
Datasheetpdf iconTOSHIBA 1SS384TE85LF
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.186$ 0.93
50+$ 0.148$ 7.40
150+$ 0.1317$ 19.76
500+$ 0.1114$ 55.70
3,000+$ 0.1024$ 307.20
6,000+$ 0.0969$ 581.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Diode Arrays
ManufacturerTOSHIBA
PackagingSC-82
Reverse Leakage Current (Ir)20uA@10V
Diode Configuration2 Independent
Voltage - DC Reverse(Vr)10V
Current - Rectified100mA
Voltage - Forward(Vf@If)500mV@100mA
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

TOSHIBA diode, silicon epitaxial Schottky barrier type 1SS384, low-voltage high-speed switching, consisting of 2 independent diodes, low forward voltage, VF(2) = 0.23V (typical), IF = 5mA. Commercial production started in September 1994.

Features

AI Translation
  • Consists of 2 independent diodes
  • Low forward voltage: VF(2) = 0.23V (typical), IF = 5mA