Nexperia PMZ130UNEYL
| Manufacturer | |
| MPN | PMZ130UNEYL |
| LCSC Part # | C547280 |
| Packaging | SOT-883 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 1.8A SOT-883 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 93pF | |
| Gate Charge(Qg) | 1.6nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
- Leadless ultra small package: 1.0×0.6×0.48 mm
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
In-Stock: 9,345
9,345 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2013 | $ 1.01 |
| 50+ | $ 0.1602 | $ 8.01 |
| 150+ | $ 0.1426 | $ 21.39 |
| 500+ | $ 0.1207 | $ 60.35 |
| 2,500+ | $ 0.1077 | $ 269.25 |
| 5,000+ | $ 0.1018 | $ 509.00 |
Standard Packaging10000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 93pF | |
| Gate Charge(Qg) | 1.6nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
- Leadless ultra small package: 1.0×0.6×0.48 mm
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



