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HXY MOSFET FDS6699S-HXY product image
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HXY MOSFET FDS6699S-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDS6699S-HXY
LCSC Part #
C54582825
Packaging
SOP-8
Customer #
Key Attributes
30V 30A 1.5V 1.4W 3.3mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET FDS6699S-HXY
In-Stock: 45
45 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1681$ 0.84
50+$ 0.1644$ 8.22
150+$ 0.162$ 24.30
500+$ 0.1595$ 79.75
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)286pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF
Gate Charge(Qg)24nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDS6699S utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 30V, drain current (ID) = 30A
  • On-resistance (RDS(ON)) < 4.5mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply