HXY MOSFET DMN3053L-13-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | DMN3053L-13-HXY |
| LCSC Part # | C54582808 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 30V 5A 1.2V 1W 33mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 49pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 33mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
DMN3053L - 13 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage V<sub>DS</sub> = 30V, drain current I<sub>D</sub> = 5A
- On-resistance R<sub>DS(ON)</sub> < 42mΩ at gate-source voltage V<sub>GS</sub> = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 90
90 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1277$ 0.1214 | $ 0.61 |
| 50+ | $ 0.1249$ 0.1187 | $ 5.94 |
| 150+ | $ 0.123$ 0.1169 | $ 17.54 |
| 500+ | $ 0.1212$ 0.1152 | $ 57.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 49pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 33mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
DMN3053L - 13 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage V<sub>DS</sub> = 30V, drain current I<sub>D</sub> = 5A
- On-resistance R<sub>DS(ON)</sub> < 42mΩ at gate-source voltage V<sub>GS</sub> = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



