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HXY MOSFET FDD8453LZ-F085-HXY product image
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HXY MOSFET FDD8453LZ-F085-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDD8453LZ-F085-HXY
LCSC Part #
C54582779
Packaging
TO-252-2L
Customer #
Key Attributes
40V 60A 1.9V 114W 5.4mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET FDD8453LZ-F085-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5355$ 0.5088$ 0.51
10+$ 0.5241$ 0.4979$ 4.98
30+$ 0.516$ 0.4902$ 14.71
100+$ 0.5078$ 0.4825$ 48.25
Standard Packaging2500/Full Reel
Better price for more quantity?
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage40V
Output Capacitance(Coss)167pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation114W
Reverse Transfer Capacitance (Crss@Vds)138pF
RDS(on)5.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.443nF
Gate Charge(Qg)48nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

FDD8453LZ - The F085 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage VDS = 40V, drain current ID = 80A
  • On-resistance RDS(ON) < 5.4mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply