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HXY MOSFET STD12NF06T4-HXY product image
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HXY MOSFET STD12NF06T4-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
STD12NF06T4-HXY
LCSC Part #
C54582735
Packaging
TO-252-2L
Customer #
Key Attributes
60V 8A 1.5V 16W 88mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET STD12NF06T4-HXY
In-Stock: 45
45 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2359$ 1.18
50+$ 0.2319$ 11.60
150+$ 0.2293$ 34.40
500+$ 0.2266$ 113.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage60V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)28pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation16W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)88mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)349pF
Gate Charge(Qg)8nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The STD12NF06T4 uses advanced trench technology to deliver excellent on-state resistance (RDS(ON)), low gate charge, and operation down to a gate voltage of 4.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60V, drain current (ID) = 8A
  • On-resistance (RDS(ON)) < 100mΩ at VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply