HXY MOSFET DMG2305UXQ-13-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | DMG2305UXQ-13-HXY |
| LCSC Part # | C54582700 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 20V 5A 1V 1.31W 35mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 114pF | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF | |
| RDS(on) | 35mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 857pF | |
| Gate Charge(Qg) | 10.2nC@4.5V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
DMG2305UXQ - 13 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = -20V, ID = -5A
- RDS(ON) < 45mΩ (at VGS = 4.5V)
Applications
AI Translation
- High power and current handling capability
- Lead-free product
- SMT package
- PWM applications
- Load switch
- Power management
- SOT-23 package
- P-channel MOSFET
In-Stock: 95
95 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0511 | $ 0.26 |
| 50+ | $ 0.05 | $ 2.50 |
| 150+ | $ 0.0493 | $ 7.40 |
| 500+ | $ 0.0485 | $ 24.25 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 114pF | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF | |
| RDS(on) | 35mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 857pF | |
| Gate Charge(Qg) | 10.2nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
DMG2305UXQ - 13 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = -20V, ID = -5A
- RDS(ON) < 45mΩ (at VGS = 4.5V)
Applications
AI Translation
- High power and current handling capability
- Lead-free product
- SMT package
- PWM applications
- Load switch
- Power management
- SOT-23 package
- P-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



