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HXY MOSFET DMG2305UX-13-HXY product image
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HXY MOSFET DMG2305UX-13-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
DMG2305UX-13-HXY
LCSC Part #
C54582699
Packaging
SOT-23
Customer #
Key Attributes
20V 5A 1V 1.31W 35mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET DMG2305UX-13-HXY
In-Stock: 90
90 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0379$ 0.38
100+$ 0.0371$ 3.71
300+$ 0.0365$ 10.95
1,000+$ 0.036$ 36.00
Standard Packaging3000/Full Reel
Better price for more quantity?
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-23
ConfigurationStandalone
Drain to Source Voltage20V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)114pF
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.31W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)35mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)857pF
Gate Charge(Qg)10.2nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMG2305UX - 13 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 2.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = -20V, drain current (ID) = -5A
  • On-resistance (RDS(ON)) < 45mΩ at gate-source voltage (VGS) = 4.5V

Applications

AI Translation
  • High power and current handling capability
  • Lead-free product required
  • Surface mount package
  • PWM applications
  • Load switching
  • Power management