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HXY MOSFET ZXMP3F35N8TA-HXY product image
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HXY MOSFET ZXMP3F35N8TA-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
ZXMP3F35N8TA-HXY
LCSC Part #
C54582683
Packaging
SOP-8
Customer #
Key Attributes
30V 12A 1.6V 2.5W 10mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET ZXMP3F35N8TA-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4696$ 0.47
10+$ 0.4614$ 4.61
30+$ 0.4566$ 13.70
100+$ 0.4517$ 45.17
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)233pF
Current - Continuous Drain(Id)12A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)206pF
Number1 P-Channel
Input Capacitance(Ciss)1.77nF
Gate Charge(Qg)22nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The ZXMP3F35N8TA utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications. Available in SOP-8 package.

Features

AI Translation
  • Drain-source voltage (VDS) = -30V, drain current (ID) = -12A
  • On-resistance (RDS(ON)) < 15mΩ at VGS = 10V
  • P-channel MOSFET

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply