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HXY MOSFET DMP3018SFV-7-HXY product image
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HXY MOSFET DMP3018SFV-7-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
DMP3018SFV-7-HXY
LCSC Part #
C54582642
Packaging
DFN-8L(3x3)
Customer #
Key Attributes
30V 55A 1.5V 21.5W 8.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET DMP3018SFV-7-HXY
In-Stock: 45
45 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1809$ 0.1719$ 0.86
50+$ 0.1769$ 0.1681$ 8.41
150+$ 0.1743$ 0.1656$ 24.84
500+$ 0.1716$ 0.1631$ 81.55
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(3x3)
ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)346pF
Current - Continuous Drain(Id)55A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation21.5W
Reverse Transfer Capacitance (Crss@Vds)319pF
RDS(on)8.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.8nF
Gate Charge(Qg)30nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

DMP3018SFV - 7 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = -30V, Drain Current (ID) = -55A
  • On-Resistance (RDS(ON)) < 11mΩ at Gate-Source Voltage (VGS) = -10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply