LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HXY MOSFET IRFR130ATM-HXY product image
  • IRFR130ATM-HXY thumbnail 1
  • IRFR130ATM-HXY thumbnail 2
  • IRFR130ATM-HXY thumbnail 3
  • Pinout
  • Footprint
Images for reference only

HXY MOSFET IRFR130ATM-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IRFR130ATM-HXY
LCSC Part #
C54582603
Packaging
TO-252-2L
Customer #
Key Attributes
100V 12A 1.8V 17W 95mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IRFR130ATM-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.222$ 0.22
10+$ 0.2172$ 2.17
30+$ 0.2139$ 6.42
100+$ 0.2107$ 21.07
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Output Capacitance(Coss)25.9pF
Current - Continuous Drain(Id)12A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation17W
RDS(on)95mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)21.4pF
Number1 N-channel
Input Capacitance(Ciss)196pF
Gate Charge(Qg)4.3nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IRFR130ATM utilizes advanced SGT MOSFET technology, delivering low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage (VDS) = 100V, drain current (ID) = 12A
  • On-resistance (RDS(ON)) < 120mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification