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HXY MOSFET IPD50N10S3L16ATMA2-HXY product image
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HXY MOSFET IPD50N10S3L16ATMA2-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD50N10S3L16ATMA2-HXY
LCSC Part #
C54582568
Packaging
TO-252-2L
Customer #
Key Attributes
100V 60A 1.7V 67.5W 13.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD50N10S3L16ATMA2-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.8042$ 0.7640$ 0.76
10+$ 0.7864$ 0.7471$ 7.47
30+$ 0.7751$ 0.7364$ 22.09
100+$ 0.7621$ 0.7240$ 72.40
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)144pF
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation67.5W
Reverse Transfer Capacitance (Crss@Vds)11.3pF
RDS(on)13.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.208nF
Gate Charge(Qg)22.7nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IPD50N10S3L16ATMA2 utilizes advanced SGT MOSFET technology, delivering low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability. Package: TO-252-2L.

Features

AI Translation
  • Drain-source voltage (VDS) = 100V, drain current (ID) = 60A
  • On-resistance (RDS(ON)) < 17mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation

Consumer electronics power supplies, motor control, synchronous rectification, isolated DC, synchronous rectification applications, N-channel MOSFET