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HXY MOSFET FDD86113LZ-HXY product image
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HXY MOSFET FDD86113LZ-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDD86113LZ-HXY
LCSC Part #
C54582563
Packaging
TO-252-2L
Customer #
Key Attributes
100V 20A 2.5V 34.7W 80mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET FDD86113LZ-HXY
In-Stock: 48
48 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.257$ 0.2442$ 0.24
10+$ 0.2505$ 0.2380$ 2.38
30+$ 0.2473$ 0.2350$ 7.05
100+$ 0.244$ 0.2318$ 23.18
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
RDS(on)80mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 N-channel
Input Capacitance(Ciss)1.535nF
Gate Charge(Qg)26.2nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The FDD86113LZ utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 100V, Drain Current (ID) = 20A
  • On-State Resistance (RDS(ON)) < 87mΩ at Gate-Source Voltage (VGS) = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply