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HXY MOSFET FDD86102-HXY product image
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HXY MOSFET FDD86102-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDD86102-HXY
LCSC Part #
C54582561
Packaging
TO-252-2L
Customer #
Key Attributes
100V 40A 1.8V 27W 15mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET FDD86102-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2755$ 0.28
10+$ 0.269$ 2.69
30+$ 0.2642$ 7.93
100+$ 0.2609$ 26.09
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)310pF
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)23.5pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)822pF
Gate Charge(Qg)22.7nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The FDD86102 utilizes advanced SGT MOSFET technology to deliver low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.

Features

AI Translation
  • Drain-source voltage (VDS) = 100V, drain current (ID) = 40A
  • On-resistance (RDS(ON)) < 23mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC
  • Synchronous rectification applications