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HXY MOSFET FDD86110-HXY product image
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HXY MOSFET FDD86110-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDD86110-HXY
LCSC Part #
C54582554
Packaging
TO-252-2L
Customer #
Key Attributes
100V 70A 1.8V 100W 8.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET FDD86110-HXY
In-Stock: 48
48 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5121$ 0.51
10+$ 0.5007$ 5.01
30+$ 0.4942$ 14.83
100+$ 0.4861$ 48.61
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Output Capacitance(Coss)451pF
Current - Continuous Drain(Id)70A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)12.9pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.368nF
Gate Charge(Qg)31.3nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The FDD86110 utilizes advanced SGT MOSFET technology, delivering low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.

Features

AI Translation
  • Drain-to-source voltage (VDS) = 100V, drain current (ID) = 70A
  • On-resistance (RDS(ON)) < 10.5mΩ at gate-to-source voltage (VGS) = 10V

Applications

AI Translation
  • DC-DC Converter
  • Power Management
  • Synchronous Rectification
  • TO-252-2L Package
  • N-SGT MOSFET