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HXY MOSFET IPD50P04P4L11ATMA1-HXY product image
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HXY MOSFET IPD50P04P4L11ATMA1-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD50P04P4L11ATMA1-HXY
LCSC Part #
C54582548
Packaging
TO-252-2L
Customer #
Key Attributes
40V 80A 1.6V 81W 6.4mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD50P04P4L11ATMA1-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3416$ 0.3246$ 0.32
10+$ 0.3335$ 0.3169$ 3.17
30+$ 0.3286$ 0.3122$ 9.37
100+$ 0.3237$ 0.3076$ 30.76
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)430pF
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation81W
RDS(on)6.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)385pF
Number1 P-Channel
Input Capacitance(Ciss)5.295nF
Gate Charge(Qg)110nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IPD50P04P4L11ATMA1 employs advanced trench technology, delivering excellent on-state resistance (RDS(ON)), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications. Available in a TO-252-2L package.

Features

AI Translation
  • Drain-source voltage (VDS) = -40V, drain current (ID) = -80A
  • On-resistance (RDS(ON)) < 8.2mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • P-channel MOSFET