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HXY MOSFET IPD50N04S408ATMA1-HXY product image
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HXY MOSFET IPD50N04S408ATMA1-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD50N04S408ATMA1-HXY
LCSC Part #
C54582538
Packaging
TO-252-2L
Customer #
Key Attributes
40V 60A 1.5V 34.6W 7.7mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD50N04S408ATMA1-HXY
In-Stock: 47
47 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3188$ 0.3029$ 0.30
10+$ 0.3107$ 0.2952$ 2.95
30+$ 0.3075$ 0.2922$ 8.77
100+$ 0.3026$ 0.2875$ 28.75
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage40V
Output Capacitance(Coss)148pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation34.6W
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)7.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.639nF
Gate Charge(Qg)16nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The IPD50N04S408ATMA1 employs advanced trench technology to deliver excellent on-state resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage VDS = 40V, drain current ID = 60A
  • On-resistance RDS(ON) < 10mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • TO-252-2L package