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HXY MOSFET IPD30N06S4L23ATMA1-HXY product image
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HXY MOSFET IPD30N06S4L23ATMA1-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD30N06S4L23ATMA1-HXY
LCSC Part #
C54582524
Packaging
TO-252-2L
Customer #
Key Attributes
60V 50A 1.5V 87.7W 13mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD30N06S4L23ATMA1-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4045$ 0.3843$ 0.38
10+$ 0.3948$ 0.3751$ 3.75
30+$ 0.39$ 0.3705$ 11.12
100+$ 0.3835$ 0.3644$ 36.44
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)185pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation87.7W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.498nF
Gate Charge(Qg)36nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IPD30N06S4L23ATMA1 employs advanced trench technology to deliver excellent on-state resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60V, drain current (ID) = 50A
  • On-resistance (RDS(ON)) < 17mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply