LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HXY MOSFET STD30NE06LT4-HXY product image
  • STD30NE06LT4-HXY thumbnail 1
  • STD30NE06LT4-HXY thumbnail 2
  • STD30NE06LT4-HXY thumbnail 3
  • Pinout
  • Footprint
Images for reference only

HXY MOSFET STD30NE06LT4-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
STD30NE06LT4-HXY
LCSC Part #
C54582510
Packaging
TO-252-2L
Customer #
Key Attributes
60V 30A 2.5V 34.7W 22mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET STD30NE06LT4-HXY
In-Stock: 48
48 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2411$ 0.24
10+$ 0.2347$ 2.35
30+$ 0.2314$ 6.94
100+$ 0.2282$ 22.82
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)86pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
RDS(on)22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)64pF
Number1 N-channel
Input Capacitance(Ciss)1.378nF
Gate Charge(Qg)12.6nC@4.5V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The STD30NE06LT4 utilizes advanced trench technology to deliver excellent on-state resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60V, drain current (ID) = 30A
  • On-resistance (RDS(ON)) < 26mΩ at VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply