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HXY MOSFET 2N7002BKW-HXY product image
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HXY MOSFET 2N7002BKW-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
2N7002BKW-HXY
LCSC Part #
C54582499
Packaging
SOT-323
Customer #
Key Attributes
60V 115mA 1.6V 200mW 1.3Ω@10V 1 N-channel N-Channel SOT-323 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET 2N7002BKW-HXY
In-Stock: 95
95 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0745$ 0.0708$ 0.35
50+$ 0.0729$ 0.0693$ 3.47
150+$ 0.0718$ 0.0683$ 10.25
500+$ 0.0707$ 0.0672$ 33.60
Standard Packaging3000/Full Reel
Better price for more quantity?
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-323
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)115mA
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation200mW
RDS(on)1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The 2N7002BKW utilizes advanced trench technology to deliver excellent on-state resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 0.115A
  • On-Resistance (RDS(ON)) < 3Ω at VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • N-channel MOSFET