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HXY MOSFET BSS138PW-HXY product image
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HXY MOSFET BSS138PW-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
BSS138PW-HXY
LCSC Part #
C54582498
Packaging
SOT-323
Customer #
Key Attributes
60V 115mA 1.6V 200mW 1.3Ω@10V 1 N-channel N-Channel SOT-323 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET BSS138PW-HXY
In-Stock: 95
95 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0852$ 0.0810$ 0.41
50+$ 0.0833$ 0.0792$ 3.96
150+$ 0.082$ 0.0779$ 11.69
500+$ 0.0808$ 0.0768$ 38.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-323
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)115mA
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation200mW
RDS(on)1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The BSS138PW utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 0.115A
  • On-Resistance (RDS(ON)) < 3Ω at VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • N-channel MOSFET