HXY MOSFET BSS138PW-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | BSS138PW-HXY |
| LCSC Part # | C54582498 |
| Packaging | SOT-323 |
| Customer # | |
| Key Attributes | 60V 115mA 1.6V 200mW 1.3Ω@10V 1 N-channel N-Channel SOT-323 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-323 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 115mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 200mW | |
| RDS(on) | 1.3Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The BSS138PW utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 0.115A
- On-Resistance (RDS(ON)) < 3Ω at VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
- N-channel MOSFET
In-Stock: 95
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0852$ 0.0810 | $ 0.41 |
| 50+ | $ 0.0833$ 0.0792 | $ 3.96 |
| 150+ | $ 0.082$ 0.0779 | $ 11.69 |
| 500+ | $ 0.0808$ 0.0768 | $ 38.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-323 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 115mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 200mW | |
| RDS(on) | 1.3Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The BSS138PW utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 0.115A
- On-Resistance (RDS(ON)) < 3Ω at VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
- N-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



