HXY MOSFET NVTFS030N06CTAG-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | NVTFS030N06CTAG-HXY |
| LCSC Part # | C54582489 |
| Packaging | DFN-8L(3x3) |
| Customer # | |
| Key Attributes | 60V 20A 1.8V 33W 24mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 64pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 33W | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NVTFS030N06CTAG utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation down to 4.5V gate voltage. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage VDS = 60V, drain current ID = 20A
- On-resistance RDS(ON) < 30mΩ at gate-source voltage VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 49
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.3371 | $ 0.34 |
| 10+ | $ 0.3306 | $ 3.31 |
| 30+ | $ 0.3257 | $ 9.77 |
| 100+ | $ 0.3209 | $ 32.09 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 64pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 33W | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NVTFS030N06CTAG utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation down to 4.5V gate voltage. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage VDS = 60V, drain current ID = 20A
- On-resistance RDS(ON) < 30mΩ at gate-source voltage VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



