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HXY MOSFET NVTFS030N06CTAG-HXY product image
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HXY MOSFET NVTFS030N06CTAG-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
NVTFS030N06CTAG-HXY
LCSC Part #
C54582489
Packaging
DFN-8L(3x3)
Customer #
Key Attributes
60V 20A 1.8V 33W 24mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET NVTFS030N06CTAG-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3371$ 0.34
10+$ 0.3306$ 3.31
30+$ 0.3257$ 9.77
100+$ 0.3209$ 32.09
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(3x3)
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)64pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.06nF
Gate Charge(Qg)26nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

The NVTFS030N06CTAG utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation down to 4.5V gate voltage. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage VDS = 60V, drain current ID = 20A
  • On-resistance RDS(ON) < 30mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply