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HXY MOSFET IPD30N06S4L23ATMA2-HXY product image
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HXY MOSFET IPD30N06S4L23ATMA2-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD30N06S4L23ATMA2-HXY
LCSC Part #
C54582429
Packaging
TO-252-2L
Customer #
Key Attributes
60V 50A 1.5V 87.7W 13mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD30N06S4L23ATMA2-HXY
In-Stock: 48
48 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4207$ 0.3997$ 0.40
10+$ 0.4126$ 0.3920$ 3.92
30+$ 0.4062$ 0.3859$ 11.58
100+$ 0.3997$ 0.3798$ 37.98
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)185pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation87.7W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.498nF
Gate Charge(Qg)36nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IPD30N06S4L23ATMA2 utilizes advanced trench technology to deliver excellent on-state resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage VDS = 60V, drain current ID = 50A
  • On-resistance RDS(ON) < 17mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply