HXY MOSFET NTRV4101PT1G-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | NTRV4101PT1G-HXY |
| LCSC Part # | C54582411 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 20V 3A 700mV 1W 60mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Output Capacitance(Coss) | 75pF | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 60mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 3.3nC@2.5V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NTRV4101PT1G utilizes advanced trench technology to deliver excellent on-resistance RDS(ON). This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- VDS = -20V, ID = -3A
- RDS(ON) < 80mΩ (at VGS = -4.5V)
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 90
90 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0347$ 0.0330 | $ 0.33 |
| 100+ | $ 0.034$ 0.0323 | $ 3.23 |
| 300+ | $ 0.0335$ 0.0319 | $ 9.57 |
| 1,000+ | $ 0.033$ 0.0314 | $ 31.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Output Capacitance(Coss) | 75pF | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 60mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 3.3nC@2.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NTRV4101PT1G utilizes advanced trench technology to deliver excellent on-resistance RDS(ON). This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- VDS = -20V, ID = -3A
- RDS(ON) < 80mΩ (at VGS = -4.5V)
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C54582411 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



