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HXY MOSFET DMN2050LQ-7-HXY product image
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HXY MOSFET DMN2050LQ-7-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
DMN2050LQ-7-HXY
LCSC Part #
C54582407
Packaging
SOT-23
Customer #
Key Attributes
20V 3A 750mV 900mW 23mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET DMN2050LQ-7-HXY
In-Stock: 95
95 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1532$ 0.1456$ 0.73
50+$ 0.1499$ 0.1425$ 7.13
150+$ 0.1476$ 0.1403$ 21.05
500+$ 0.1454$ 0.1382$ 69.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-23
ConfigurationStandalone
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)48pF
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)23mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)260pF
Gate Charge(Qg)2.9nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMN2050LQ-7 utilizes advanced trench technology to deliver excellent on-resistance, low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage VDS = 20V, drain current ID = 3.0A
  • Drain-source on-resistance RDS(ON) < 35Ω at gate-source voltage VGS = 4.5V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply