VBsemi Elec IRFP140NPBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRFP140NPBF-VB |
| LCSC Part # | C5456561 |
| Packaging | TO-247AC |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 85A TO-247AC |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 85A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.1nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 175°C junction temperature
- Low thermal resistance package
- 100% gate resistance (Rg) tested
- RoHS compliant
Applications
AI Translation
- Isolated DC/DC Converter
In-Stock: 34
34 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.8581 | $ 1.86 |
| 10+ | $ 1.5838 | $ 15.84 |
| 30+ | $ 1.3389 | $ 40.17 |
| 90+ | $ 1.1638 | $ 104.74 |
| 510+ | $ 1.0833 | $ 552.48 |
| 990+ | $ 1.0492 | $ 1038.71 |
Standard Packaging30/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 85A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.1nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 175°C junction temperature
- Low thermal resistance package
- 100% gate resistance (Rg) tested
- RoHS compliant
Applications
AI Translation
- Isolated DC/DC Converter
C5456561 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



