ST STW13N95K3
| Manufacturer | |
| MPN | STW13N95K3 |
| LCSC Part # | C5456136 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 950V 10A TO-247 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 680mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 51nC@760V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These SuperMESH3TM Power MOSFETs are the result of improvements applied to STMicroelectronics' SuperMESHTM technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Features
AI Translation
- Gate charge minimized
- Extremely large avalanche performance
- 100% avalanche tested
- Very low intrinsic capacitance
- Zener-protected
Applications
AI Translation
- Switching applications
In-Stock: 20
20 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.0903 | $ 5.09 |
| 10+ | $ 4.3325 | $ 43.33 |
| 30+ | $ 3.87 | $ 116.10 |
| 90+ | $ 3.4822 | $ 313.40 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 680mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 51nC@760V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These SuperMESH3TM Power MOSFETs are the result of improvements applied to STMicroelectronics' SuperMESHTM technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Features
AI Translation
- Gate charge minimized
- Extremely large avalanche performance
- 100% avalanche tested
- Very low intrinsic capacitance
- Zener-protected
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



