UMW AO3413A
| Manufacturer | UMWAsian Brands |
| MPN | AO3413A |
| LCSC Part # | C545578 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 3A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 66mΩ@4.5V;80mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 745pF | |
| Gate Charge(Qg) | 11nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3413A utilizes advanced trench technology to achieve excellent R<sub>DS(on)</sub>, low gate charge, and operation down to 1.8V gate voltage. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- VDS(V) = -20 V
- ID = -3 A (VGS = -4.5 V)
- RDS(on) < 66 mΩ (VGS = -4.5 V)
- RDS(on) < 80 mΩ (VGS = -2.5 V)
In-Stock: 7,120
7,120 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0384 | $ 0.77 |
| 200+ | $ 0.029 | $ 5.80 |
| 600+ | $ 0.0238 | $ 14.28 |
| 3,000+ | $ 0.0208 | $ 62.40 |
| 9,000+ | $ 0.0181 | $ 162.90 |
| 21,000+ | $ 0.0166 | $ 348.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 66mΩ@4.5V;80mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 745pF | |
| Gate Charge(Qg) | 11nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3413A utilizes advanced trench technology to achieve excellent R<sub>DS(on)</sub>, low gate charge, and operation down to 1.8V gate voltage. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- VDS(V) = -20 V
- ID = -3 A (VGS = -4.5 V)
- RDS(on) < 66 mΩ (VGS = -4.5 V)
- RDS(on) < 80 mΩ (VGS = -2.5 V)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
