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ElecSuper DMN2024U-7(ES) product image
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ElecSuper DMN2024U-7(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
DMN2024U-7(ES)
LCSC Part #
C54533323
Packaging
SOT-23
Customer #
Key Attributes
20V 7.5A 700mV 13mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper DMN2024U-7(ES)
In-Stock: 3,000
3,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1143$ 0.57
50+$ 0.0911$ 4.56
150+$ 0.0794$ 11.91
500+$ 0.0707$ 35.35
3,000+$ 0.0637$ 191.10
6,000+$ 0.0603$ 361.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage20V
Current - Continuous Drain(Id)7.5A
Output Capacitance(Coss)160pF
Gate Threshold Voltage (Vgs(th))700mV
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)10nC
Vgs±10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMN2024U-7(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent on-resistance RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product DMN2024U-7(ES) is lead-free.

Features

AI Translation
  • At 20V, R<sub>DS(ON)</sub> = 13mΩ (typical), V<sub>GS</sub> = 4.5V
  • R<sub>DS(ON)</sub> = 16mΩ (typical), V<sub>GS</sub> = 2.5V
  • Trench MOSFET technology
  • High-density cell design for low on-resistance
  • Halogen-free material
  • Reliable and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion