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ElecSuper BSC0901NS(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSC0901NS(ES)
LCSC Part #
C54533311
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
30V 180A 1.6V 1.15mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper BSC0901NS(ES)
In-Stock: 1,795
1,795 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3157$ 1.58
50+$ 0.2501$ 12.51
150+$ 0.222$ 33.30
500+$ 0.1869$ 93.45
2,500+$ 0.1713$ 428.25
5,000+$ 0.1619$ 809.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(5x6)
Drain to Source Voltage30V
Output Capacitance(Coss)1.757nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)1.15mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)98pF
Number1 N-channel
Input Capacitance(Ciss)3.1nF
Gate Charge(Qg)44nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

BSC0901NS(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent on-resistance (RDS(ON)) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSC0901NS(ES) is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 1.15mΩ (typical), VGS = 10V
  • RDS(ON) = 1.65mΩ (typical), VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(on)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion