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ElecSuper CSD16415Q5(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
CSD16415Q5(ES)
LCSC Part #
C54533303
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
30V 180A 1.6V 1.15mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper CSD16415Q5(ES)
In-Stock: 197
197 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.4613$ 0.46
10+$ 0.4516$ 4.52
30+$ 0.4451$ 13.35
100+$ 0.4387$ 43.87
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(5x6)
Drain to Source Voltage30V
Output Capacitance(Coss)1.757nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)1.15mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)98pF
Number1 N-channel
Input Capacitance(Ciss)3.1nF
Gate Charge(Qg)44nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

CSD16415Q5(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent on-resistance at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product CSD16415Q5(ES) is lead-free.

Features

AI Translation
  • 30V, typical drain-source on-resistance of 1.15mΩ at V<sub>GS</sub> = 10V
  • Typical drain-source on-resistance of 1.65mΩ at V<sub>GS</sub> = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low R<sub>DS(on)</sub>
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion