DIODES DMN2310U-7
| Manufacturer | |
| MPN | DMN2310U-7 |
| LCSC Part # | C5451811 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 1.6A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 480mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 360mΩ@1.8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 38pF | |
| Gate Charge(Qg) | 700pC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Load Switch
In-Stock: 1,270
1,270 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0731 | $ 0.73 |
| 100+ | $ 0.0588 | $ 5.88 |
| 300+ | $ 0.0517 | $ 15.51 |
| 3,000+ | $ 0.0463 | $ 138.90 |
| 6,000+ | $ 0.042 | $ 252.00 |
| 9,000+ | $ 0.0399 | $ 359.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 480mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 360mΩ@1.8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 38pF | |
| Gate Charge(Qg) | 700pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Load Switch
C5451811 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



