TI SN74CBT3306CPWR

The SN74CBT3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (rₒₙ), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3306C provides protection for undershoot up to -2V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3306C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

• Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (rₒₙ) Characteristics (rₒₙ = 3 Ω Typical)
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption (Icc = 3 μA Max)
• Vcc Operating Range From 4 V to 5.5 V
• Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)

• USB Interface
• Bus Isolation
• Low-Distortion Signal Gating