TI LMG3522R030RQSR

The LMG3522R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG3522R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.

• 650-V GaN-on-Si FET with integrated gate driver
• Integrated high precision gate bias voltage
• 200-V/ns FET hold-off
• 2-MHz switching frequency
• 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
• Operates from 7.5-V to 18-V supply
• Cycle-by-cycle overcurrent and latched shortcircuit protection with <100 -ns response
• Withstands 720-V surge while hard-switching
• Self-protection from internal overtemperature and UVLO monitoring

• Switch-mode power converters
• Merchant network and server PSU
• Merchant telecom rectifiers
• Solar inverters and industrial motor drives
• Uninterruptable power supplies